EDM Basic
Electrostatic Dose Modulator
The Electrostatic Dose Modulator (EDM) is a fast beam blanking system with a pre-sample electrostatic deflector, including electronics and software control. With EDM, the beam can switch on or off in less than 20 ns. This 100,000x improvement in blanking speed immediately improves the clarity of data taken at fast exposure times. EDM can also attenuate electron illumination without affecting imaging conditions, giving TEM and STEM users exceptional control over the dose and dose rate on their samples.
Features at a Glance
Independent intensity adjustment
By rapidly turning the beam on and off with variable pulse widths, the EDM makes it easy to adjust the average beam intensity without changing the image conditions. A desktop accessory knob provides an intuitive interface to adjust the dose attenuation factor.
Modern control software
The EDM works out of the box as a fast beam blanker. Control software is included for programmable dose attenuation, logging, and more.
Lightning-fast speeds
EDM systems achieve switching times faster than 20 ns.
Dose structuring
Users can take control of their illumination by applying dose in pulses with variable durations as short as 125 ns and frequencies up to 500 kHz.
Integration
The EDM acts as a fast and reliable pre- sample beam blanker while supporting a companion Relativity Sub-Framing System as well as third-party hardware.
Fast beam blanking
| Quantity | Value |
|---|---|
| Maximum pulse frequency | 500 kHz |
| Transition time 90%-10% | < 20 ns |
| Blanking signals | 3 inputs |
Dose attenuation
| Configuration | EDM Basic |
|---|---|
| Application | TEM and STEM imaging |
| Pulse repetition frequency (max) | 500 kHz |
| Pulse width increment | 62.5 ns |
| Minimum pulse width | 125 ns |
Applicable Models
- JEM-ARM300F2
- JEM-ARM200F (CFEG)
- NEOARM (CFEG)
- JEM-F200 (CFEG)
- JEM-2200FS*
- JEM-2100F*
- JEM-3300
- JEM-Z200FSC
- JEM-Z200CA
Pulsed Beam TEM Illumination
Dose attenuation by pulsed illumination with Frequency of 500 kHz (2 μs) in a high resolution STEM at 300 kV using Si [110] in the condition of pixel dwell time with 19 μs/pixel (1024 ×1024 pixels), by changing duration ratio from 90% to 50% during acquisition of one STEM image in 20 s.
Pulsed Beam TEM Illumination
